DETERMINATION OF TRANSISTOR FIGURE-OF-MERIT FOR RADIATION EFFECTS.

摘要

Transient radiation effects on current gain (h sub FE) collector leakage current (I sub CBO) and saturation voltage (V sub SAT) were studied with both linear accelerator and pulsed reactor irradiations. The latter was also used for permanent damage studies. Transient radiation effects are found to relate to effects on (I sub CBO). Germanium mesa types show the least permanent degradation to (h sub FE) and (V sub SAT),but the silicon planar types show no (I sub CBO) degration. The silicon planar types are the least susceptible to transient effects. (h sub FE) is shown not to degrade transientwise as long as the operating point is maintained constant. Figures-ofmerit are defined. (Author)