Improved Power Device Figure-of-Merit (4.0 x 108 V2 9. 1 cm'2) in AIGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si

摘要

The OFF-state breakdown voltage (BVgo) characteristics of AIGaN/GaN high-electron-mobility transistors (HEMTs) on a 4-in. Si substrate were investigated and analyzed. The HEMTs with i^d = 10 (xm exhibited BVq(j of 723 V with the specific on-resistance Rdsionj of 1.3mQcm2. Due to the improved ohmic contact, the devices exhibited low Rdsion] values. The power device figure-of-merit (FOM = BKgd2/flDS[ON]) is as high as 4.0 x 108 V2 Q'1 cm~2, the highest among the reported values for GaN HEMTs on a 4-in. Si. Due to the low vertical buffer leakage current, a high vertical breakdown voltage of ~1200V has been achieved with the total buffer thickness (afeutf) of 2.2irr.