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Study of Neutron Damage to Semiconductors Using Junction Devices

机译:用连接器件研究中子对半导体的损伤

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Detailed measurements on special gated Si p+n diodes yield the damage parameters associated with the three basic current components in p-n junctions. Recombination in the neutral bulk, recombination and generation in the space-charge region, and recombination and generation at the surface are characterized over a wide range of neutron doses and injection levels. (Author)

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