Study of damage formation and annealing of implanted Ⅲ-nitride semiconductors for optoelectronic devices

摘要

An n-GaN-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 ℃ efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p-n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions.