Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

摘要

Methods of forming a semiconductor device include forming a dielectric layer on a Group III-nitride semiconductor layer, selectively removing portions of the dielectric layer over spaced apart source and drain regions of the semiconductor layer, implanting ions having a first conductivity type directly into the source and drain regions of the semiconductor layer, annealing the semiconductor layer and the dielectric layer to activate the implanted ions, and forming metal contacts on the source and drain regions of the semiconductor layer.