Pulsed InP LSA Devices Grown by Solution Epitaxy.

摘要

After reports of high efficiency transferred electron oscillators fabricated from vapour phase epitaxial indium phosphide at the Royal Radar Establishment, and liquid phase epitaxy at Mullard Research Laboratories, a program of work was initiated at Cornell to produce InP LSA diodes. Since our laboratory has had extensive experience dealing with liquid phase epitaxial GaAs, we elected to grow InP in the liquid phase in the expectation that much of the technology developed in the past for GaAs growth would be applicable to InP. (Author)