Investigation of Basic Electronic Transport, Recombination and Optical Properties in InAs1-x Px Alloy systems and the Gasd Epitaxial Films for 1-2 μm IR Applications

摘要

A systematic study has been made on the effect of hydrogen carrier gas flow-rate on the electron concentration and electron mobility of the epitaxially grown InAs(0.61)P(0.39) samples. Resistivity and Hall effect measurements yield the resistivity, Hall coefficient, electron mobility and electron density as a function of temperature between 3K and 300K for epitaxial samples 153 to 159 and the bulk samples H-2, H-5 and H-6. The activation energy for the donor states, the density of donors and acceptors and scattering mechanisms for electrons in InAs(1-x)P(x) alloys were calculated and analyzed. The alloy compositions were determined from the electron microprobe analysis. The energy band gap versus alloy composition for the InAs(1-x)P(x) system was deduced from the optical transmission data. Optical absorption coefficients near the fundamental absorption edge were obtained for bulk samples H-1, H-2, H-5, H-6, H-7 and W16. The result shows that the energy band gap varies linearly with the alloy composition in InAs(1-x)P(x).