Graphene has been an excellent material for future nano electronics applications and has the potential to replace silicon due to it's remarkable transport properties. Large-area epitaxial graphene film growth by thermal decomposition of SiC wafer has provided the missing pathway to a viable electronics technology.;Epitaxial graphene film growth conditions and surface properties have been investigated, and transport properties of epitaxial graphene are studied in this research, such as spin based transport and charged based transport in a magnetic field, which showed remarkable 2D electron gas (2DEG) nature. Possible high-k integration on epitaxial graphene based devices were also investigated, which showed high device performance and established a pathway to the graphene based nano electronics applications.
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