Design and Fabrication of Radiation-Hardened MNOS Memory Array.

摘要

The report describes work performed to develop a radiation-hardened MNOS memory array for use in a RAM memory of an airborne computer. A study of MNOS device operation led to the fabrication and test of several memory and fixed threshold transistors and 256-bit memory circuits. Environmental test data taken at three radiation simulation sources and under endurance stress is presented along with studies on circuit design, packaging, and system design.