Properties of Sn-Doped In2O3 Films Prepared by RF Sputtering.

摘要

An rf sputtering process has been used without postdeposition annealing to prepare Sn-doped In2O3 films with low electrical resistivity (down to 0.0002 ohm-cm), high visible transmission, and high infrared reflectivity (up to 93% at 10 micrometers for applications as transparent conductors and heat mirrors. Substrate heating is accomplished entirely by the electron bombardment intrinsic to rf sputtering, rather than by using an auxiliary resistance heater. The film properties improve with increasing substrate temperature up to 650 C, the maximum employed, and are relatively independent of other sputtering parameters. The electrical and optical properties of the films do not depend significantly on the crystallographic orientation degree of texturing, or substrate material (glass, fused silica, and single crystal Al2O3 and CaF2).