Numerical Technique for Removing Residual Gate-Source Capacitances When Extracting Parasitic Inductance for GaN High Electron Mobility Transistors (HEMTs)

摘要

The design of monolithic microwave integrated circuits (MMIC) is dependent on the ability to generate accurate device models. Prior knowledge of the external parasitic components is required to determine the small signal model of the intrinsic device. A simple technique for determining and correcting for the gate-source capacitance during the extraction of the series inductance will be presented. This technique has worked well when integrated into existing small signal extraction procedures.