Temperature Dependence of Resistivity and Hole Conductivity Mobility in p-Type Silicon.

摘要

A new method is employed to determine the temperature dependence of the resistivity and hole conductivity mobility of p-type silicon. This method involves the use of an aluminum-on-p-Si ohmic diode and a magnesium on p-Si Schottky barrier diode on the same silicon chip. The resistivity is determined from the Al/p-Si ohmic diode. The hole concentration is evaluated from the C-V data of the Mg/p-Si Schottky barrier diode. The conductivity mobility is then computed from the resistivity and hole concentration data. The following ranges are covered: 77-300K, 0.4-100 ohm-cm and 5 x 10 to the 16th power-2 x 10 to the 14th power holes/cu cm at room temperature. (Author)