Temperature Dependences of Acceptor Concentration, Conductivity Mobility, and Resistivity of Ga-Doped Czochralski-Si Crystals

摘要

The temperature dependences of acceptor concentration n_A, conductivity mobility μc, and resistivity p of gallium (Ga)-doped Czochralski (CZ)-silicon (Si) crystals were studied in the temperature range from 220 to 360 K (-53 to 87 ℃). Crystals with Ga concentration N_a from 6.1 ×10~(14) to 2.0 × 10~(18) atoms/cm~3 were analyzed by Hall-effect measurements using the van der Pauw method in the temperature range from 80 to 360 K. The temperature dependences of n_A and p of crystals with less than 10~(16) atoms/cm~3 showed the same trends as those of B-doped p-type Si crystals, while those of crystals with more than 10~(16) atoms/cm~3 differed from those of B-doped crystals, mainly because the temperature dependence of n_A is not in the saturation range and the degree of ionization n_A/N_a decreases with decreasing temperature from 360 to 220K.