Study of HgCdTe MIS Technology.

摘要

Metal-insulator-semiconductor (MIS) devices were fabricated on single-crystal HgCdTe with both 5-micrometer and 12-micrometer cutoff wavelengths. The purpose was to evaluate existing technology and identify fundamental limitations, for the application of HgCdTe to monolithic intrinsic focal plane arrays. For 12-micormeter material it was shown that interband tunneling provides such a large dark current that a MIS device cannot store charge effectively. (Author)