Subbanding, Charge Transport and Related Applications in Semiconductor Devices

摘要

The project is concerned with the investigation of quantization, charge transport and applications in two dimensional subbanding systems including MOSFET and various junction field effect configurations. The degree of subbanding to be expected in various semiconductor materials has been characterized for different channel doping densities, temperatures and surface orientation. The materials treated here are (110) and (111) Si, n-GaAs, n-InP, n-InAs and n-InSb. Results for both buried conducting channels and surface conducting channels are presented. It is noted that subband separation in excess of 100 meV is to be expected for n-Si if appropriate surface orientation and doping concentration. Even larger separations may be expected for various compound semiconductors. The Fermi level has been calculated for different channel dopings at 4.2K, 77K and 300K. The channels are shown to be degenerate under certain conditions in spite of the fact that a 3D system would be non-degenerate at the same temperature and concentration. Theory is presented for transverse voltage amplifying devices. This structure constitutes a new class of semiconductor devices. (Author)