GaAsP Infrared Light Sources.

摘要

Investigations were performed in an effort to extend the state-of-the-art of GaAsP light emitters and emitter arrays. This effort included a materials study aimed at providing usable GaAsP capable of yielding high quantum and power efficiency at the desired wavelength. The effort also consisted of a study of processing and fabrication techniques to take full advantage of the material capabilities. Device quality slices GaAs(1-x)P(x) material have been prepared by chemical vapor epitaxial deposition with values of x ranging from 0.01to 0.18. Both selenium and sulfur have been successfully used as a dopant. Hemispherical shaped junction light emitters were fabricated from this material with a quantum efficiency as high as 6.6%. Emission wavelengths from 7800A to 8600A were demonstrated. At the present time,the problem of device degradation has been found to be the main area in which further effort is reqiured. (Author)