Radiation Effects on Charge-Coupled Devices and other MOS Structures.

摘要

This report describes results of radiation effects studies on charge-coupled devices (CCDs) and other MOS structures. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with such devices with a view toward gaining understanding of benefit to developers of radiation-tolerant devices. A study of neutron damage mechanisms in CCDs was performed with emphasis placed on investigation of dark current increases.