首页> 美国政府科技报告 >Inelastic Electron Scattering in 28Si between 4MeV and 50MeV Excitation Energy.
【24h】

Inelastic Electron Scattering in 28Si between 4MeV and 50MeV Excitation Energy.

机译:28me中4meV与50meV激发能量的非弹性电子散射。

获取原文

摘要

91.2 MeV electrons were used to study 28 Si in the excitation range from 4 to 50 MeV. Fragmentation of E2 strength into states below the GQR region was found, with states between 0 and 15 MeV exhausting 35% of the E2 isoscalar EWSR. Available (gamma, abs) data were used to disentangle E1 and E2 strength in the region 15 to 30 MeV and show E2 strength separated into two distinct groups in this region. A cluster of E2 strength centered at 17.5 MeV and believed to be in the oblate ground state well exhausts 22% of the E2 isoscalar EWSR and a broad but clearly separate group of strength from 20 to 30 MeV exhausts 65% of the E2 isovector EWSR. Significant transition strength was found between 30 and 50 MeV which exhausts between 25 and 35% of the total E2 EWSR. Evidence was found for the existence of an E2 giant resonance corresponding to the oblate well of 28Si at 24 MeV. (Author)

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号