Modeling of Integrated Circuit Components for Transient Radiation Response Prediction.

摘要

The report describes the analysis and investigations of the transient radiation and nonradiation responses of an integrated circuit transistor and resistor. The model was derived from the continuity equations of the lateral current flow in each region of interest:emitter,base,collector and substrate. The equations for the model are nonlinear partial differential equations but,when approximated by difference equations,result in a distributed electrical network. The resulting model is capable of incorporating the nonhomogeneous nature of the various regions if required. Studies were made of the trade-off of simplicity for accuracy. Special test samples (typical of state-of-the-art technology) were fabricated. Situations are described where a laterally distributed model may or may not be required. In addition experimental and predicted responses of the transistor and resistor are compared. The report also describes the development of a silicon-controlled rectifier model for predicting radiation-induced latch-up,techniques for solving the convolution integral on the SCEPTRE computer program, a model for charge competition,and an analysis of the transient response from a PN junction. (Author)