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Transient radiation response of VLSI circuits: shadowing effects and pulse widths dependence in laser measurements

机译:VLSI电路的瞬态辐射响应:激光测量中的阴影效应和脉冲宽度依赖性

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摘要

Transient radiation response on VLSI-circuits (SRAM, EPROM, EEPROM) of various complexities were studied for different pulse widths using both laser and accelerator sources. The shadowing effects of the incident laser light due to the metallization were also investigated.
机译:使用激光源和加速器源,针对不同的脉冲宽度,研究了各种复杂程度的VLSI电路(SRAM,EPROM,EEPROM)上的瞬态辐射响应。还研究了由于金属化而导致的入射激光的遮蔽效应。

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