Low Resistivity-High Minority Carrier Lifetime Single Crystal Silicon Investigation

摘要

The objective of this program is to improve the performance of N+/P silicon solar cells by improving the minority carrier lifetime of moderate to low resistivity silicon material. The behavior of cells fabricated from improved material will be demonstrated by measuring electrical output without irradiation and after 1 Mev electrons and 10 MeV proton irradiation. This report discusses the first fifteen months' efforts toward developing and evaluating a new solar cell silicon material. During this time period, equipment and techniques for material growth have been developed along with analysis of methods for removing impurities from non-ultra pure silicon after wafer fabrication. Five preliminary ultra pure ingots have been grown using boron ion implantation and a single ingot using elemental gallium to provide the P dopant. Results are presented for solar cells made from the ingots. (Author)