Preparation and Characteristics of Single Crystals and Epitaxial Layers of Silicon Carbide by Molten Salt Electrolysis

摘要

Thin layers of SiC were electrodeposited from Li2CO3/SiO2 melts onto alpha-SiC substrates at 1000 - 1050 C using potential differences around -0.5V versus polycrystalline SiC anodes. The layers appear to be expitaxial. Although conditions were found under which the melt exhibited good long term stability, attempts to grow bulk SiC crystals were handicapped by delamination of the seed crystals. Attempts to electrodeposit SiC from K2SiF6/Li2CO3/LiF/KF and SiO2/Na2CO3/NaBO2/LiF melts yielded botryoidal deposits containing excess carbon. (Author)