Thin Film Monolithic Bypass Filters.

摘要

Monolithic Thin Film Bypass Filters consisting of one inductor and one capacitor have been fabricated using vacuum deposition techniques. The inductor and the capacitor are formed at the same time by depositing alternate layers of metal and dielectric materials. The inductor and the capacitor are interconnected to form a three terminal device. Two sizes of Bypass Filters, designated as LC-55 and LC-100 having inductance value ranging from 35 to 1,100 nanohenries and capacitance value ranging from 11.5 to 510 picofarads have been constructed. It has been shown that the values of inductance and capacitance of a Bypass Filter can be varied almost independently by changing the thickness of the dielectric deposited. Measurements of the electrical parameters of the inductor and the capacitor individually as well as the frequency characteristics of the device functioning as a Lowpass or Highpass filter have been conducted.