FORMING METHOD OF THIN FILM CAPACITOR, MANUFACTURE OF THIN FILM CAPACITOR, MANUFACTURE OF THIN FILM BYPASS CAPACITOR, AND THIN FILM CAPACITOR

摘要

PURPOSE: To obtain internal connection by a spatially effective method wherein a dielectric substrate, a ground path, a power supply path, and a rear side ground terminal are operated to accelerate connection to other electric components, by arranging a bottom surface contact layer, an insulating layer, and an uppermost surface contact layer. ;CONSTITUTION: A thin film bypass capacitor 10 is manufactured by forming a plurality of through holes penetrating a nonconductive substrate in the thickness direction, and burying conductive metal in the through holes 14 in order to form a ground path 16 and a power supply path 17. A series of metallized layer 21 having a rear side bonded layer 18, a rear side conducting layer 20, and a rear side metal layer 22 is added to the rear of a base substrate 12. A series of a bottom surface contact layer 25 having a bottom surface contact bonded layer 24, a bottom surface contact conducting layer 26, and a bottom surface contact metal layer 28 are added to the surface of the base substrate 12.;COPYRIGHT: (C)1994,JPO