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Ion Implant Damage Regrowth and Characterization, and Depth Distribution of Defects and Impurities in Proton-Implanted GaAs.

机译：离子注入损伤再生和表征，以及质子注入Gaas中缺陷和杂质的深度分布。

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摘要

Cr and 0 together have been implanted into damaged (amorphised) and crystalline GaAs and annealed some of the material at 830 degrees C for 20 min. Annealed and unannealed samples have been SIMS profiled for Cr and for O. All are now being analyzed by TEM by Sadana at UC Berkeley. When the TEM results are available, the work will be reported.

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作者
Wilson, R. G.;
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年度 1982
页码 1-16
总页数 16
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductors; Crystal defects; Ion implantation; Gallium arsenides; Amorphous materials; Crystal structure; Annealing; Implantation; Chromium; Oxygen; Doping; Crystal growth; Impurities; Mass spectrometry; Electron microscopes; SIMS(Secondary Ion Mass Spectroscopy); TEM(Transmission Electron Microscope);

机译：半导体;晶体缺陷;离子注入;砷化镓;非晶材料;晶体结构;退火;注入;铬;氧;掺杂;晶体生长;杂质;质谱;电子显微镜; sIms（二次离子质谱）;透射电子（透射电子）显微镜）;

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专利

1. Depth distributions of defects and impurities in 100‐keV B+ ion implanted silicon [J] . Journal of Applied Physics . 1973,第1期

机译：100keV B +离子注入硅中缺陷和杂质的深度分布
2. Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect [J] . Wittmaack K. Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 1998,第4期

机译：浅深度氧化物注入分布的SIMS深度剖析中的浓度深度校准和轰击诱导的杂质重定位：消除基质效应的程序
3. Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga_2O_3 [J] . Sugie Ryuichi, Uchida Tomoyuki, Hashimoto Ai, Annales de l'I.H.P . 2020,第12期

机译：低能量横截面阴极致发光，Si离子注入β-GA_2O_3点缺陷的深度分布分析
4. Depth Distribution of Lattice Damage-Related D_Ⅰ and D_Ⅱ Defects after Ion Implantation and Annealing of 6H-SiC [C] . Yaroslav Koshka, Galyna Melnychuck International Conference on Silicon Carbide and Related Materials 2001 Pt.1 Oct 28-Nov 2, 2001 Tsukuba, Japan . 2001

机译：离子注入和6H-SiC退火后与晶格损伤相关的D_Ⅰ和D_Ⅱ缺陷的深度分布
5. The characterization of defects, impurities, and carriers in gallium arsenide crystal growth and their effects on the electrical properties, thermal stability, and implant anneal characteristics. [D] . Liao, De-Dui. 1990

机译：砷化镓晶体生长中缺陷，杂质和载体的特征及其对电性能，热稳定性和注入退火特性的影响。
6. Effect of implant placement depth on the peri-implant bone defect configurations in ligature-induced peri-implantitis: An experimental study in dogs [O] . Baoxin Huang, Li Zhang, Li Xu, 2018

机译：植入物放置深度对结扎诱导的种植体周围炎中种植体周围骨缺损形态的影响：在狗中进行的实验研究
7. Peculiarities of distribution of defects and introduced impurity in P+-implanted GaAs crystals [O] . Komarov, F. F., Tashlykov, I. S. 1980

机译：P +注入的GaAs晶体中缺陷和引入杂质的分布特征
8. Ion Implant Damage Regrowth and Characterization, and Depth Distribution of Defects and Impurities in Proton-Implanted GaAs [R] . Wilson, R. G. 1982

机译：离子注入损伤再生和表征以及质子注入Gaas中缺陷和杂质的深度分布

Ion Implant Damage Regrowth and Characterization, and Depth Distribution of Defects and Impurities in Proton-Implanted GaAs.

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