Depth distributions of defects and impurities in 100‐keV B+ ion implanted silicon

摘要

The depth distributions of boron atoms and of radiation‐induced defects are measured in the same set of silicon samples implanted with 100‐keV boron ions at room temperature to a dose of 1×1016/cm2, by utilizing the 11B(p,α)8 Be nuclear reaction and by channeling analysis with 1.5‐MeV He+ ions, respectively. Distributions of both boron atoms and the primary defects are asymmetric and significantly deviated from the Gaussian distribution. The width (FWHM) of the damage distribution is about 0.26 μ and is much larger than that of boron distribution which is 0.09 μ. The peak of the primary defect distribution is about 15% shallower than that of the boron distribution. The secondary defects have a Gaussian distribution, the peak depth of which almost coincides with that of boron distribution. The correlation between the electrical and the channeling measurements are also studied, and it is suggested that the secondary defects are strongly associated with boron atoms.