High-Pressure Gradient-Freeze Growth of Single Crystals of Indium Phosphide.

摘要

Large polycrystalline InP ingots weighing up to 2,000 gms have been compounded in a gradient-freeze internally pressure balanced growth system. Ingots grown in the system have an impurity level of about 2 x 10 to the 16th power atoms/cc. This system promises to be a method by which polycrystalline and possibly single crystals can be grown in a few hours and at a reasonable cost.