Electron Devices on Piezoelectric Semiconductors: A Device Model.

摘要

The effects of acoustic waves on the terminal characteristics of electron devices on piezoelectric semiconductors are considered. The piezoelectric displacement charge is regarded as a time-and space-varying perturbation of the doping density of the semiconductor. Incorporation of this doping perturbation into the usual acoustically quiescent device model yields the acoustically perturbed characteristics. In particular, the interaction of a surface acoustic wave with a field-effect transistor on GaAs is considered. Good agreement with experimental data is demonstrated.