Role of Oxygen in Zone-Melting Recrystallization of Silicon-on-Insulator Films.

摘要

Using secondary-ion mass spectroscopy, we have found that oxygen is strongly concentrated at the sub-boundaries in zone-melting-recrystallized silicon-on-insulator films prepared by the graphite-strip-heater technique. This observation suggests that the formation of sub-boundaries during recrystallization may be caused by constitutional supercooling resulting from the presence of oxygen that is dissolved into a molten Si zone from the adjacent SiO2 layers, regardless of the heating techniques employed, the sub-boundaries almost always present in these films may well have dissolved oxygen as their common origin.