Theoretical Model of Hg(1-x)Cd(x)Te Photovoltaic and Photoconductive Infrared Detectors

摘要

Theoretical models have been developed for calculating the spectral responsivity and noise of Hg1-xCdxTe photovoltaic and photoconductive infrared detectors. These models are based on the classical theories for p-n junctions and sweepout-limited photoconductors. They incorporate numerous empirical expressions for describing all important material parameters of Hgx-xCdxTe as functions of the composition parameter x and temperature. The excess carrier lifetimes in n-type material are calculated by including radiative and Auger processes. In p-type material, Shockley-Read recombination is also included when appropriate. Provisions are made to include surface effects in photoconductors, but 1/f noise is neglected. (Author)