A method for producing a photodiode with a simplified planar device architecture based on a single layer of HgCdTe using a mature, established growth technology for the sensing material, combined with an implanted homojunction which is at least partially activated during MOCVD CdTe passivation. The device architecture is based on a planar structure, a p-on-n homojunction for sensing the infrared radiation, and a CdTe or CdZnTe/HgCdTe heterostructure for passivation. The MOCVD CdTe passivation can be applied ex-situ, irrespective of the growth technology of the sensing material, and the homojunction is at least partially activated while applying the CdTe passivation. Thus, a major simplification in device architecture is achieved, based on a single layer in contrast to known, double layer heterostructures. Further, the inventive method allows application of different growth technologies for the sensing material and the passivation layer, allowing the sensing material to be supplied via the best available production techniques. Careful control of the interface properties between the passivation layer and the sensing material can be achieved. The method features a reduction in the number of production steps, and includes high-quality passivation. The production process is simplified, and features reduced cost, increased uniformity, yield, reproducibility, and high performance.
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