Comparison of GaAs MESFET and GaAs PIN Diodes as Switch Elements

摘要

The Kurokawa Schlosser quality factor Q is used to compare the GaAs MESFET switch with the GaAs PIN diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q is calculated from an approximate expression. The GaAs PIN has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs PIN has the higher Q and therefore should have improved characteristics as a switch in terms of insertion loss and isolation. Keywords: Reprints; GaAs MESFET switch; Gallium arsenide pin (GaAs PIN diode switch; Schottky diodes.