Integration of high-Q GaAs varactor diodes and 0.25 mu m GaAs MESFET's for multifunction millimeter-wave monolithic circuit applications

摘要

Two technologies are demonstrated whereby high-Q, vertical-structure, abrupt-junction varactor diodes are monolithically integrated with 0.25- mu m GaAs MESFETs on semi-insulating GaAs substrates for multifunction millimeter-wave monolithic circuit applications. Diodes with various anode sizes have been realized with measured capacitance swings of <2.1:1 from 0 V to -4 V and series resistances of approximately 1 Omega . Diodes having a zero bias capacitance of 0.35 pF have Q's of <19000 (50 MHz) with -4 V applied to the anode. Under power bias conditions, the MESFETs have a measured gain of <6 dB at 35 GHz with extrapolated values for f/sub t/ and f/sub max/ of 32 GHz and 78 GHz, respectively. Using these technologies, a monolithic Ka-band voltage controlled oscillator (VCO) containing a varactor diode, a 0.25- mu m GaAs MESFET, and the usual MMIC passive components has been built and tested. At around 31 GHz, the circuit has demonstrated 60-mW power output with 300 MHz of tuning bandwidth.