X-Band GaAs ISIS (Integrated Series IMPATT Structures) IMPATTS

摘要

The underlying purpose of this nine month program was to demonstrate the feasibility of synergistic power in Gallium Arsenide Integrated Series IMPATT Structures (ISIS). In order to demonstrate such a feasibility, the program entailed the following: Task 1: (a) Designing of appropriate doping profiles for GaAs X-band ISIS diodes; (b) Growing Integrated Series IMPATT Structures using Vapor Phase Epitaxy (VPE); and (c) Characterizing the doping profiles of the ISIS wafers. Task 2: (a) Processing ISIS wafers grown by VPE into single mesa diodes with integral heat sinks; (b) Processing ISIS wafers grown by Molecular Beam Epitaxy (to be provided by NRL) into single mesa diodes with integral heat sinks; and (c) Assembling diodes of (a) and (b) into standard packages compatible with coaxial mounts.