Laser Photochemical Etching of Molybdenum and Tungsten Thin Films by Surface Halogenation

摘要

Laser direct-write etching of the refractory metals Mo and W has been developed using reactions in Chlorine and Nitrogen Tri-fluoride vapors. Rate and high spatial resolution are simultaneously optimized using a two-vapor halogenation/development sequence, based on surface modification. Local-area laser chlorination of the metal surface is used to predispose areas to subsequent bulk etching.