CVD CARBONYL THIN FILMS OF TUNGSTEN AND MOLYBDENUM AND THEIR SILICIDES - A GOOD ALTERNATIVE TO CVD FLUORIDE TUNGSTEN TECHNOLOGY

摘要

By thermal decomposition of W(CO)6 and Mo(CO)6 at temperatures below 400°C and atmospheric pressure thin films on Si wafers were grown. This technology ia shown to be an alternative to the fluotide one which uses WF6 as a source material. Low resistivities together with a lack of errosion of Si substrate are possible. As-deposited films contain considerable amount of carbon and oxygen. By proper thermal annealing in H2 atmosphere as well as by rapid thermal annealing in vacuum optimum conditions were found to obtain low resistive metal and metal silicides films. Auger electron spectroscopy and XRD-studies were used to show the connection between the chemical composition and structure of the two kinds of films on the one hand and their resistivities on the other.