Tungsten di:silicide CVD using tungsten hexa:fluoride - and di:chloro:silane and di:silane providing mechanism for increasing resistivity

摘要

Tungsten disilicide is deposited on a wafer heated to above 450 deg C in a chamber, pref. maintained at 30-300 mtorr, through which flows a gas mixt. comprising WF6, SiH2Cl2 and less than 10% Si2H6.