Double-layered semiconductor film formation for gate/bit line interface of transistor, involves flushing bulk dichloro silane tungsten silicide with silane and dichloro silane tungsten fluoride

摘要

A polysilicon layer is formed over a substrate at 530 deg C. The temperature of the polysilicon layer is increased and is flushed sequentially with silane. Dichloro silane (DCS) and tungsten fluoride (WF6) form a transition layer and a tungsten silicide layer respectively. A bulk DCS tungsten silicide layer is formed by the combination of silane and DCS WF6 and is flushed by silane and DCS WF6.