Millimeter-Wave Heterojunction Two-Terminal Devices

摘要

The objective of this study is to investigate the performance of heterojunction MITATT (mixed tunnel-avalanche transit time) diodes at millimeter-wave frequencies. Along with the heterojunction MITATT diodes, GaAs double-drift IMPATT (impact ionization avalanche transit-time) diodes were also fabricated and their RF performance were evaluated. Keywords: Mixed tunnel-avalanche transit-time (MITATT); Heterojunction; Millimeter-wave frequencies; Impact ionization avalanche transit time (IMPATT); Tunnel transit time (TUNNETT).