Fabrication of Sub-100 nm Linewidth Periodic Structures for Study of Quantum Effects from Interference and Confinement in Si Inversion Layers

摘要

Two new types of Si metal-oxide-semiconductor field-effect transistor (MOSFET) devices have been fabricated and tested which involve a dual gage structure, the lower one being a W grating of 0.2 micrometers period, 0.1 micrometers linewidth. These devices, the lateral surface superlattice and the quasi-one-dimensional device, explore the regime where quantum mechanical effects become important. Fabrication techniques are described and projections made with regard to lithographic techniques for future electronic systems based on sub-100 nm linewidth control approximately less than 10 nm and high pixel-transfer rate. The mask-to-substrate gap is constrained by diffraction. However, with a resist of sufficiently high contrast (and low sensitivity to avoid edge raggedness) linewidths of 50 nm should be feasible in high volume production at mask-substrate gaps of a few micrometers.