Dual-Gate FET (Field Effect Transistor) Amplifier Switch. Task 1

摘要

A gallium-arsenide dual-gate field effect transistor amplifier-switch was designed and fabricated to provide an improved means for generating a high-speed microwave pulse from a CW source to simulate an actual radar pulse. Fast rise and fall time capabilities was demonstrated by the FET amplifier-switches which provided an on-off ratio of more than 50-dB. Descriptions of the FET amplifier-switches are provided along with specific test results over the 7 to 11 GHz frequency range.