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Observation of Phonon Modes Through Resonant Mixing with Electronic States in the Secondary-Emission Spectra of a GaAs/Al(0.32)Ga(0.68)As Single Quantum Well. (Reannouncement with New Availability Information).

机译：在Gaas / al（0.32）Ga（0.68）单量子阱的二次发射光谱中通过谐振混合电子态观察声子模式。（重新公布新的可用性信息）。

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Madhukar, A.; Lao, P. D.; Tang, W. C.; Aidan, M.; Voillot, F.;
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年度 1987
页码 1-5
总页数 5
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Quantum electronics; Gallium arsenides; Emission spectra; Secondary emission; Aluminum gallium arsenides; Holes(Electron deficiencies); Photoluminescence; Reprints; Quantum wells;

机译：量子电子学;砷化镓;发射光谱;二次发射;砷化铝镓;空穴（电子缺陷）;光致发光;重印;量子阱;

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1. Temperature dependence of photoluminescence from as-grown and plasma-etched InAs_(0.45)P_(0.55)/In_(0.68)Ga_(0.32)As_(0.45)P_(0.55) http://InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well [J] . Meng Cao, Hui-Zhen Wu, Yan-Feng Lao Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2010,第1a2期

机译：生长和等离子刻蚀的InAs_（0.45）P_（0.55）/ In_（0.68）Ga_（0.32）As_（0.45）P_（0.55）应变单量子阱
2. Photoluminescence characteristic of as-grown and thermally annealed n-and p-type modulation-doped Ga_(0.68)In_(0.32)N_xAs_(1-x)/GaAs quantum well structures [J] . Donmez Omer, Sarcan Fahrettin, Erol Ayse, Thin Solid Films . 2021,第Auga31期

机译：以生长和热退火的N-和P型调节掺杂Ga_（0.68）IN_（0.32）N_XAS_（1-X）/ GaAs量子阱结构的光致发光特性
3. Experimental determination of electroabsorption in GaAs/Al/sub 0.32/Ga/sub 0.68/As multiple quantum well structures as function of well width [J] . Jelley K.W., Alavi K. Electronics Letters . 1988,第25期

机译：GaAs / Al / sub 0.32 / Ga / sub 0.68 / As多量子阱结构中电吸收随阱宽变化的实验确定
4. Resonant micro-photolumineseence and excitation spectra of GaAs/AlGaAs single quantum dots on a 411A GaAs surface [C] . Watatani, C., Edamatsu, . 2001

机译：411 A GaAs表面上GaAs / AlGaAs单量子点的共振微光致发光和激发光谱
5. Three wave mixing in Periodically Quantum-Well-Intermixed GaAs:AlGaAs superlattices: Modeling, Optimization, and Parametric Generation. [D] . Sigal, Iliya. 2010

机译：GaAs：AlGaAs超晶格在周期性量子阱混合中的三波混合：建模，优化和参数生成。
6. Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single-quantum well by reflectance-difference spectroscopy and its behavior under uniaxial strain [O] . Jin-Ling Yu, Yong-Hai Chen, Chen-Guang Tang, 2011

机译：反射差光谱法观察（001）InGaAs / GaAs单量子阱中的强各向异性禁跃及其在单轴应变下的行为
7. Degenerate electron gas effects in the modulation spectroscopy of pseudomorphic Al0.32Ga0.68As/In0.15Ga 0.85As/GaAs high electron mobility transistor structures [O] . Dimoulas, A, Zekentes, K, Androulidaki, M, 1993

机译：拟晶态Al0.32Ga0.68As / In0.15Ga 0.85As / GaAs高电子迁移率晶体管结构的调制光谱中的简并电子气效应
8. Optical Investigation of Resonant Mixing between Electronic and Optical Vibrational Levels in GaAs/Al(x)Ga(1-x)As Single Quantum Wells. (Reannouncement with New Availability Information). [R] . Tang, W. C., Lao, P., Madhukar, A. 1988

机译：Gaas / al（x）Ga（1-x）单量子阱中电子和光学振动水平的共振混合光学研究。（重新公布新的可用性信息）。

Observation of Phonon Modes Through Resonant Mixing with Electronic States in the Secondary-Emission Spectra of a GaAs/Al(0.32)Ga(0.68)As Single Quantum Well. (Reannouncement with New Availability Information).

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