Temperature dependence of photoluminescence from as-grown and plasma-etched InAs_(0.45)P_(0.55)/In_(0.68)Ga_(0.32)As_(0.45)P_(0.55) http://InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

摘要

The temperature and laser pumping power dependent photoluminescence (PL) has been investigated on strained single quantum wells (SSQWs) using inductively coupled-plasma (ICP) etching method. Significant improvement of PL performances was observed in the plasma-etched SSQW in comparison with the as-grown samples. The enhancement factor increases with the increasing of temperature, but decreases with the increasing of pump power. At lower temperatures, the larger full width at half maximum (FWHM) and the blue-shift of PL peak positions for the plasma-etched SSQW may be attributed to the damage and reduced composition fluctuation within the quantum well structure aroused during plasma etching.