Optical and Structural Characteristics of Heavily Boron-Implanted CdTe

摘要

Cadmium telluride single crystals were subjected to multiple-energy boron ion implants with total doses up to 1.5 x 10 sq cm. Various diagnostic techniques were used to assess the structural and electronic properties of these crystals in their as-implanted condition and after anneals under vacuum. The degradation of crystallinity following the boron implants was clearly evident. Annealing temperatures up to 500 C were not effective removing the damage from these heavy dose implants. The chosen boron implant conditions and annealing procedures have not produced substitutional boron donor centers. Excellent correlations were obtained for model calculations of boron projected range and implant damage profiles with the corresponding experimental parameters. Keywords: Heavy ions; Interstitials; Photoreflectance. (aw)