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Influence of Au diffusion on structural, electrical and optical characteristics of CdTe thin films

机译:Au扩散对CdTe薄膜结构,电学和光学特性的影响

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Diffusion of Au and its effects on structural, electrical and optical properties of CdTe films fabricated by the close-spaced sublimation technique have been investigated. Diffusion of Au was studied in the range 400-550 degrees C using energy dispersive x-ray fluorescence analysis. Au-doped and un-doped CdTe films were characterized by x-ray diffraction (XRD), electrical and optical absorption measurements. The temperature dependence of the diffusion coefficient of Au in CdTe films is described as D = 4.4 x 10(-7) exp(-0.54 eV/kT). The mechanism of Au diffusion in polycrystalline CdTe films is attributed to the fast migration of Au along grain boundaries with simultaneous penetration into grains and settling on Cd-vacancies. It is supposed that the weak influence of Au diffusion on XRD patterns of CdTe films can be explained by dispersal of Au atoms preferentially on Cd-vacancies owing to proximity of the covalent radius of Au and Cd. Au atoms, placed on Cd-vacancies (AuCd) during fast cooling from diffusion temperature to room temperature, show an acceptor behaviour with an energy level about of E-v + 0.2 eV. The nature of this level is discussed.
机译:研究了金的扩散及其对通过近距离升华技术制备的CdTe薄膜的结构,电学和光学性质的影响。使用能量分散X射线荧光分析研究了Au在400-550摄氏度范围内的扩散。掺杂金和未掺杂的CdTe薄膜通过X射线衍射(XRD),电和光吸收测量进行了表征。 CdTe膜中Au扩散系数的温度依赖性描述为D = 4.4 x 10(-7)exp(-0.54 eV / kT)。 Au在多晶CdTe薄膜中的扩散机理归因于Au沿晶界快速迁移,同时渗透到晶粒中并沉积在Cd空位上。可以认为,由于Au和Cd的共价半径接近,Au原子优先分散在Cd空位上,可以解释Au扩散对CdTe薄膜XRD图案的弱影响。在从扩散温度到室温的快速冷却过程中,放置在Cd空位(AuCd)上的Au原子表现出受主行为,其能级约为E-v + 0.2 eV。讨论了此级别的性质。

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