Growth, Physical Properties, and Device Characteristics of Hg(1-x)Mn(x)Te and Hg(1-x-y)Cd(y)Mn(x)Te Epilayers.

摘要

The original aims of this research program were: (1) To develop techniques for reproducible growth of device quality HG(1-x)Mn(x) and Hg(1-x-y)Cd(y)Mn(x)Te epitaxial layers with controlled carrier concentration and alloy composition in the range 0<x<0.2, and (2) To measure transport, optical, and other physical properties of the samples grown. (js)