Resonant Tunneling via Landau Levels in GaAs-Ga1-xAlxAs Heterostructures

摘要

Within the effective-mass approximation, the current-voltage characteristics are calculated for resonant tunneling through a Ga(1-x)Al(x)As-GaAs-Ga(1-x)Al(x)As heterostructure in the presence of a magnetic field applied perpendicular to the interfaces. We find qualitative agreement between the theoretical results and measurements performed on a 100 A-40A-100 A Ga0.6Al0.4As-GaAs-Ga0.6Al0.4As heterostructure in magnetic fields up to 15 T. Quantitative discrepancies between theory and experiment point out the need for a more complete treatment of resonant tunneling phenomena. Keywords: Resonant tunneling; Landau levels; Heterostructure in magnetic fields; Reprints. (JHD)