Development of Rare Earth/Semiconductor Interfaces: Ce/InP(110), Sm/InSb(110), and Ce/CdTe(110). (Reannouncement with New Availability Information).

摘要

Interfaces formed by the deposition of metal atoms onto compound semiconductors have been the subject of much experimental and theoretical work, particularly within the last several years. These studies have shown systematic behavior regarding the processes of disruption, reaction, and segregation, and how these effects correlate with Schottky barrier formation. This intense interest is driven by the need to understand, in detail, the behavior of metal-semiconductor junctions and interfacial phenomena in general. Photoelectron spectroscopy has been one of the primary experimental tools because of its tunable surface sensitivity and its ability to detect both chemical and electronic charges at the surface. It has been particularly useful when done in concert with other techniques since the problems of surface structure are complex. Most photoemission experiments of metal semiconductor interfaces have been concerned with simple metals or transition metals.