Minimization of Intermodulation in GaAs MESFET Small-Signal Amplifiers.

摘要

This report examines the dependence of third-order intermodulation distortion on the source reflection coefficient Gamma sub s as a function of frequency, in an amplifier designed according to available-gain criteria. By means of a numerical formulation of the Volterra series, a complete equivalent circuit of the FET can be used, and intermodulation calculations include all feedback effects. The sensitivity of IP3 to Gamma sub s decreases with increasing frequency and can be related to the MESFET's stability. Keywords: Intermodulation distortion; Nonlinear distortion; Volterra series; Field effect transistor amplifier. (JHD)