Optimization of the Intermodulation Performance of GaAs MESFET Small-Signal Amplifiers.

摘要

Matching conditions that optimize the third-order intermodulation distortion of small-signal MESFET amplifiers, subject to available-gain criteria, are derived. A numerical formulation of the Volterra series is used in conjunction with a complete equivalent circuit of the FET. The sensitivity of IP(3) to gamma (s) decreased with frequency and can be related to the MESFET's stability. (RRH)